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| MJE13005B ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( T =25 C ) A o CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation o Tamb=25 C Tcase=25oC SYMBOL VCBO RATING UNIT V V V A VCEO VEBO Ic 700 400 9 4 1.5 Ptot Tj Tstg 75 W Junction Temperature Storage Temperature Range 150 -55~+150 ELECTRICAL CHARACTERISTICS (TA=25oC ) CHARACTERISTIC Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut off current Collector-Emitter Cut off Current Emitter-Base Cut off Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-emitter Voltage SYMBOL V(BR)CEO TEST CONDITION Ic=1m A, IB=0 IE=0 , Ic=1m A IE=1mA, IC=0 VCB=700V, IE=0 VCE=400V, IB=0 VEB=9V, Ic=0 VCE=5V, Ic=1A Ic=1A, IB=0.25A I E = 1A 2 Ic= 1A, IB =0.25A IB1=-IB2=0.4A MIN. MAX. UNIT V 400 700 9 V V A A A V(BR)CBO V(BR) EBO ICBO ICEO IEBO hFE VCE(sat) V BE - 10 00 - 1000 10 1000 40 V V _ _ _ 1.0 1.25 Base-Emitter Saturation Voltage Fall Time Storage Time Freqency Characteristics VBE(sat) Ic=2A tf ts fT 1.2 0.9 V S S MHz Ic=2A IB1=- IB2=0.4A 5 - 4 VCE=10V, IC=0.5A, f=1MHz Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com |
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